By Yan Li, Deepak Goyal
This quantity presents a complete reference for graduate scholars and execs in either academia and at the basics, processing info, and purposes of 3D microelectronic packaging, an pattern for destiny microelectronic programs. Chapters written by means of specialists hide the newest study effects and development within the following parts: TSV, die processing, micro bumps, direct bonding, thermal compression bonding, complex fabrics, warmth dissipation, thermal administration, thermal mechanical modeling, caliber, reliability, fault isolation, and failure research of 3D microelectronic programs. various photos, tables, and didactic schematics are integrated all through. This crucial quantity equips readers with an in-depth knowing of all elements of 3D packaging, together with packaging structure, processing, thermal mechanical and moisture similar reliability matters, universal mess ups, constructing components, and destiny demanding situations, supplying insights into key components for destiny study and improvement.
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Additional info for 3D Microelectronic Packaging: From Fundamentals to Applications
14 Schematic describing the key steps in a D2W attach process. (a) Singulation; (b and c) die to package attach; (d) WIO Memory on an application processor the W2W and D2W flows through careful alignment methods. In this way, die larger than the bottom die can be stacked on top. Since the bottom die can be fully tested prior to committing the top die, this process has best chance among the three process of creating known good stacks. However, a key disadvantage of this process is that since the bottom die is fully assembled to a package substrate 38 R.
Key steps in this process are (a) The wafer surface is patterned and TSVs are etched and filled on the transistor side (front or active side) of the wafer. (b) After the TSV formation, the wafer is planarized and readied for transistor creation. 32 R. Mahajan and B. Sankman Fig. 11 High-level process flow for the three processes of creating TSVs (c) Transistor creation is followed by the Back End of Line (BEOL) process which creates the multiple metal/insulator layers on the silicon wafer. (d) Finally, the wafer backside is thinned to reveal the vias and creates a Redistribution Layer (RDL) (Fig.
460–464, May 2015 17. A. Klumpp, R. Merkel, P. Ramm, J. Weber, R. Weiland, Vertical system integration by using inter-chip vias and solid-liquid interdiffusion bonding. Jpn. J. Appl. Phy. 43(7A), L829–L830 (2004) 18. P. Batra, S. Skordas, D. LaTulipe, K. Winstel, C. Kothandaraman, B. Himmel, G. Maier, B. W. Gamage, J. Golz, W. Lin, T. Vo, D. Priyadarshini, A. Hubbard, K. Cauffman, B. Peethala, J. Barth, T. Kirihata, T. Graves-Abe, N. Robson, S. Iyer, Three-dimensional wafer stacking using Cu TSV integrated with 45nm high performance SOI-CMOS embedded DRAM technology.